Liquid crystal display device having touch screen function and method of fabricating the same

ABSTRACT

The present invention relates to an LCD device having a touch screen function. The LCD device of the present invention includes a plurality of gate lines, a plurality of data lines intersecting the gate lines, and a plurality of signal lines that are insulated from and juxtaposed with the data lines. First to third switching elements are formed in each of a plurality of pixel regions in the form of a matrix, which are surrounded by the gate lines and the data lines. Here, a gate electrode of the first switching element is connected to a gate line Gn, a source electrode thereof is connected to the data line, and a drain electrode thereof is connected to a pixel electrode. Further, liquid crystal capacitance and storage capacitance are formed between the pixel electrode and a common electrode. At this time, the liquid crystal capacitance is changed due to variation in the liquid crystal cell gap. The second and third switching elements are designed to read variation in the liquid crystal capacitance. A source electrode of the second switching element is connected to the pixel electrode, a drain electrode thereof is connected to the signal line, and a gate electrode thereof is connected to a previous gate line Gn- 1.  Furthermore, a source electrode of the third switching element is connected to the data line, a drain electrode thereof is connected to the pixel electrode, and a gate electrode thereof is connected to a second previous gate line Gn- 2.  Each signal line is connected to each signal amplifier.

BACKGROUND OF THE INVENTION

This application claims the priority of Korean Patent Application No.10-2003-0077574 filed on Nov. 4, 2003 in the Korean IntellectualProperty Office, the disclosure of which is incorporated herein byreference.

FIELD OF THE INVENTION

The present invention relates to a liquid crystal display device havinga touch screen function. More particularly, the present invention isdirected to a liquid crystal display device that is constructed to havea touch screen function using variation in liquid crystal cellcapacitance due to variation in liquid crystal cell gaps.

DESCRIPTION OF THE RELATED ART

Generally, a liquid crystal display device is a display device forobtaining desired image signals by applying an electric field to aliquid crystal material that fills a gap between two substrates and hasan anisotropic dielectric constant and controlling the intensity of theelectric field, thereby adjusting the amount of light that istransmitted through the substrates.

Recently, touch screen panels (TSP) have become widely used as an inputmeans. A TSP is a device that reads user's input in the form of acoordinate value and receives information corresponding to the readcoordinate value.

Heretofore, it is common that an additional touch panel is stacked andattached to a surface of a liquid crystal panel so as to add a touchscreen function to a liquid crystal display (LCD) device.

However, the LCD device in which a touch panel is attached to the liquidcrystal panel as mentioned above cannot provide high quality images,because the images are excessively floated due to light parallaxoccurring when light for displaying images reproduced on the liquidcrystal panel is transmitted through the touch panel.

Furthermore, since the additional process of attaching the two panels toeach other is required, the number of processes increases. Therefore,there are problems in that it takes a lot of time to fabricate an LCDdevice while manufacturing costs also increase.

SUMMARY OF THE INVENTION

The present invention is conceived to solve the aforementioned problems.Accordingly, an object of the present invention is to provide an LCDdevice that can implement a touch screen function by constructing acircuit capable of reading variation in a liquid crystal cell gapwithout a need to separately attach a touch panel to the LCD device.

According to an aspect of the present invention for achieving theobject, there is provided a liquid crystal display (LCD) device having atouch screen function, comprising a plurality of gate lines thattransfer scan signals; a plurality of data lines that intersect the gatelines; a plurality of signal lines that are formed in parallel with thedata lines; two or more switching elements that are formed in each of aplurality of pixel regions in the form of a matrix, which are surroundedby the gate lines and the data lines; and signal amplifiers that receivesignals applied to the signal lines in response to the operation of thetwo or more switching elements.

At this time, three switching elements may be formed in each pixelregion. Preferably, the first switching element among them is turned onto charge a relevant data voltage when a gate-on signal is applied to arelevant gate line, the second switching element is turned on to chargea previous data voltage when the gate-on signal is applied to a previousgate line, and the third switching element is turned on to apply theprevious data voltage to the signal line when the gate-on signal isapplied to a second previous gate line.

Further, two switching elements may be formed in each pixel region.Preferably, the first switching element is turned on to charge arelevant data voltage when a gate-on signal is applied to a relevantgate line, and the second switching element is turned on to apply thedata voltage charged during a previous frame time to the signal linewhen the gate-on signal is applied to a previous gate line.

According to another aspect of the present invention, there is provideda thin film transistor substrate for an LCD device having a touch screenfunction, comprising an insulating substrate; a gate line formed on theinsulating substrate; a gate insulating film covered on the gate line; adata line that intersects the gate line and defines a pixel region onthe gate insulating film; a signal line formed in parallel with the dataline; a first thin film transistor electrically connected to both thegate line and the data line; a second thin film transistor electricallyconnected to both a previous gate line and the signal line; a third thinfilm transistor electrically connected to a second previous gate lineand the data line; a protection film that covers the first to third thinfilm transistors, the data line and the signal line, and includes firstto third contact holes through which each of drain electrodes of thefirst to third thin film transistors is exposed; and a pixel electrodethat is connected to the first to third drain electrodes through thefirst to third contact holes.

Preferably, the third thin film transistor is formed in a previous pixelregion and the third drain electrode extends up to the relevant pixelregion and is connected to the relevant pixel electrode through thethird contact hole.

According to a further aspect of the present invention, there isprovided a method of fabricating a thin film transistor substrate for anLCD device having a touch screen function, comprising the steps offorming gate wiring including a gate line and first to third gateelectrodes on an insulating substrate; forming a gate insulating filmfor covering the gate wiring; forming first to third semiconductorpatterns on the gate insulating film; forming, on the gate insulatingfilm, data wiring including a data line that intersects the gate line,first to third source electrodes and first to third drain electrodesthat are electrically connected to the first to third semiconductorpatterns, and a signal line that is connected to the second sourceelectrode; forming a protection film that covers the semiconductorpatterns and the data wiring; forming first to third contact holes,through which the first to third drain electrodes are exposed, in theprotection film; and forming a pixel electrode that is connected to thefirst to third drain electrodes through the first to third contactholes.

At this time, the third drain electrode may extend from a previous pixelregion up to a relevant pixel region and be connected to a relevantpixel electrode though the third contact hole.

According to a still further aspect of the present invention, there isprovided a thin film transistor for an LCD device having a touch screenfunction, comprising an insulating substrate; a gate line formed on theinsulating substrate; a gate insulating film covered on the gate line; adata line that intersects the gate line and defines a pixel region onthe gate insulating film; a signal line formed in parallel with the dataline; a first thin film transistor electrically connected to both thegate line and the data line; a second thin film transistor electricallyconnected to both a previous gate line and the signal line; a protectionfilm that covers the first and second thin film transistors, the dataline and the signal line, and includes first and second contact holesthrough which each of drain electrodes of the first and second thin filmtransistors is exposed; and a pixel electrode that is connected to thefirst and second drain electrodes through the first and second contactholes.

According to a still further aspect of the present invention, there isprovided a method of fabricating a thin film transistor substrate for anLCD device having a touch screen function, comprising the steps offorming gate wiring including a gate line and first and second gateelectrodes on an insulating substrate; forming a gate insulating filmfor covering the gate wiring; forming first and second semiconductorpatterns on the gate insulating film; forming, on the gate insulatingfilm, data wiring including a data line that intersects the gate line,first and second source electrodes and first and second drain electrodesthat are electrically connected to the first and second semiconductorpatterns, and a signal line that is connected to the second sourceelectrode; forming a protection film that covers the semiconductorpatterns and the data wiring; forming first and second contact holes,through which the first and second drain electrodes are exposed, in theprotection film; and forming a pixel electrode that is connected to thefirst and second drain electrodes through the first and second contactholes.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects, features and advantages of the presentinvention will become apparent from the following description ofpreferred embodiments given in conjunction with the accompanyingdrawings, in which:

FIG. 1 shows the initial orientation of a liquid crystal where a liquidcrystal panel is not touched;

FIG. 2 shows the orientation of a liquid crystal changed due tovariation in a cell gap when a liquid crystal panel is touched;

FIG. 3 is a circuit diagram illustrating the configuration of a liquidcrystal display (LCD) device having a touch screen function according toa first embodiment of the present invention;

FIG. 4 is a circuit diagram illustrating the configuration of an LCDdevice having a touch screen function according to a second embodimentof the present invention;

FIG. 5 is a view showing the arrangement of a thin film transistorsubstrate for the LCD device according to the first embodiment of thepresent invention;

FIG. 6 is a sectional view of the thin film transistor substrate takenalong line VI-VI′ of FIG. 5;

FIG. 7A is a view showing the arrangement of a substrate in a first stepof fabricating a thin film transistor substrate for the LCD deviceaccording to the first embodiment of the present invention;

FIG. 7B is a sectional view of the substrate taken along line VII-VII′of FIG. 7A;

FIG. 8A is a view showing the arrangement of the substrate in the nextfabrication step of FIG. 7A;

FIG. 8B is a sectional view of the substrate taken along line VIII-VIII′of FIG. 8A;

FIG. 9A is a view showing the arrangement of the substrate in the nextfabrication step of FIG. 8B;

FIG. 9B is a sectional view of the substrate taken along line IX-IX′ ofFIG. 9A;

FIG. 10A is a view showing the arrangement of the substrate in the nextfabrication step of FIG. 9A;

FIG. 10B is a sectional view of the substrate taken along line X-X′ ofFIG. 10A;

FIG. 11 is a view showing the arrangement of a thin film transistorsubstrate for the LCD device according to the second embodiment of thepresent invention;

FIG. 12 is a sectional view of the thin film transistor substrate takenalong line XII-XII′ of FIG. 11;

FIG. 13A is a view showing the arrangement of a substrate in a firststep of fabricating a thin film transistor substrate for the LCD deviceaccording to the second embodiment of the present invention;

FIG. 13B is a sectional view of the substrate taken along lineXIII-XIII′ of FIG. 13A;

FIG. 14A is a view showing the arrangement of the substrate in the nextfabrication step of FIG. 13A;

FIG. 14B is a sectional view of the substrate taken along line XIV-XIV′of FIG. 14A;

FIG. 15A is a view showing the arrangement of the substrate in the nextfabrication step of FIG. 14A;

FIG. 15B is a sectional view of the substrate taken along line XV-XV′ ofFIG. 15A;

FIG. 16A is a view showing the arrangement of the substrate in the nextfabrication step of FIG.15 a; and

FIG. 16B is a sectional view of the substrate taken along line XVI-XVI′of FIG. 16A.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, preferred embodiments of the present invention will bedescribed in detail with reference to the accompanying drawings.

FIG. 1 shows the initial orientation of a liquid crystal where a liquidcrystal panel is not touched, and FIG. 2 shows the orientation of aliquid crystal changed due to variation in a cell gap when a liquidcrystal panel is touched.

When a liquid crystal panel is touched, it can be seen that a liquidcrystal cell gap and thus the orientation of the liquid crystal arechanged, as shown in FIG. 2.

Variation in the liquid crystal orientation and cell gap within a liquidcrystal cell results in variation in capacitance of pixels.

In general, the capacitance of each pixel in a liquid crystal panel isthe sum of liquid crystal capacitance Clc and storage capacitance Cst.

Here, the storage capacitance Cst is always constant and the liquidcrystal capacitance Clc can be expressed as the following equation 1.Clc=ε_(o)ε_(r)A/d   (1)

where ε₀ε_(r) is the dielectric constant of a liquid crystal, A is thesectional area of a pixel, and d is the cell gap.

Therefore, since a liquid crystal has anisotropic properties in that itsvertical and horizontal dielectric constants are different from eachother, the value of the liquid crystal capacitance Clc is changed due tovariation in the dielectric constant and cell gap when the liquidcrystal panel has been touched.

Accordingly, the present invention aims to implement a touch screenfunction by reading the change in the liquid crystal capacitance Clc inthe form of electrical signals.

FIG. 3 is a circuit diagram illustrating the configuration of a liquidcrystal display (LCD) device having a touch screen function according toa first embodiment of the present invention.

As shown in FIG. 3, the LCD according to the first embodiment of thepresent invention includes a plurality of gate lines Gn, Gn-1, Gn-2, . .. that transfer scan signals, and a plurality of data lines Data thatintersect the gate lines Gn, Gn-1, Gn-2, . . . and transfer image data.

Further, a plurality of signal lines 10 are insulated from andjuxtaposed with the data lines Data.

First to third switching elements TFT1, TFT2 and TFT3 are formed in eachof a plurality of pixel regions in the form of a matrix, which aresurrounded by the gate lines Gn, Gn-1, Gn-2, . . . and the data linesData. At this time, it is preferred that each of the switching elementsbe a thin film transistor.

Here, a gate electrode of the first switching element TFT1 is connectedto the gate line Gn, a source electrode thereof is connected to the dataline Data, and a drain electrode thereof is connected to a pixelelectrode P formed on a lower substrate of a liquid crystal panel.Further, a common electrode Corn is formed on an upper substrateopposite to the lower substrate.

A liquid crystal material is filled between the pixel electrode P andthe common electrode Corn and it is equivalently represented as liquidcrystal capacitance Clc. Storage capacitance Cst for maintaining avoltage applied to the liquid crystal capacitance Clc is also formed.The liquid crystal capacitance Clc and the storage capacitance (Cst)serve as driving loads of the LCD device.

In such a case, the liquid crystal capacitance Clc is changed due tovariation in a liquid crystal cell gap. The second and third switchingelements TFT2 and TFT3 for reading the variation in the liquid crystalcapacitance Clc is configured as follows.

A source electrode of the second switching element TFT2 is connected tothe pixel electrode P, a drain electrode thereof is connected to asignal line 10, and a gate electrode thereof is connected to a previousgate line Gn-1.

Further, a source electrode of the third switching element TFT3 isconnected to the data line Data, a drain electrode thereof is connectedto the pixel electrode P, and a gate electrode thereof is connected to asecond previous gate line Gn-2.

The signal lines 10 are connected to signal amplifiers 20, respectively.Each of the signal amplifiers 20 compares a signal applied to eachsignal line 10 and a reference voltage REF and then amplifies theresultant signal in response to the ON operation of the second or thirdswitching element TFT2 or TFT3, so that it can be determined whetherthere is a change in a cell gap at a desired location of the liquidcrystal panel.

Now, the operation of the LCD device according to the first embodimentof the present invention will be described.

As gate-on signals are sequentially applied to the plurality of the gatelines according to gate pulses corresponding to gate-driving signals,data signals are applied to all the data lines in synchronization withclock signals and thus images are displayed on the LCD device.

As the gate-on signal is first applied to the second previous gate lineGn-2, the third switching element TFT3 is turned on and thus a datavoltage Vdata to be applied to a second previous pixel region is chargedwith a pixel voltage.

At this time, the quantity of electric charge Q charged into the pixelcan be expressed as the following equation 2.Q=(cell capacitance)×Vdata   (2)

That is, since the quantity of electric charge is constant, the applieddata voltage Vdata varies according to variation in the capacitance ofthe liquid crystal cell (more specifically, the liquid crystalcapacitance).

Next, as a gate-on signal is applied to the first previous gate lineGn-1, the second switching element TFT2 is turned on. Thus, the voltagecharged into the cell is applied to the signal line 10 and then input tothe signal amplifier 20.

At this time, the signal amplifier 20 compares the signal applied to thesignal line 10 with the reference voltage REF and then amplifies theresultant signal. Thus, the signal amplifier can recognize variation inthe charged voltage and accordingly determine whether there is variationin a cell gap at a relevant location of the liquid crystal panel.

Thereafter, as a gate-on signal is applied to a relevant gate line On,the first switching element TFT1 is turned on and thus the relevant datavoltage Vdata is charged with a pixel voltage.

If it is assumed that the cell gap has changed at a relevant pixelregion, an ON signal is applied to the second previous gate line and thedata voltage to be charged into the second previous pixel region is thustemporarily charged into the relevant pixel region in order to read thechange in the cell gap of the relevant pixel. Since this is very shortas compared to frame time, however, it is impossible to visually checkit.

According to the first embodiment of the present invention, variation ina pixel voltage due to variation in a liquid crystal cell gap can berecognized with only the operation of a switching element withoutattaching an additional touch panel to the LCD device. Therefore, atouch screen function can be readily implemented.

Next, an LCD device having a touch screen function according to a secondembodiment of the present invention will be described with reference toFIG. 4.

FIG. 4 is a circuit diagram illustrating the configuration of the LCDhaving the touch screen function according to the second embodiment ofthe present invention.

As shown in FIG. 4, the LCD device according to the second embodiment ofthe present invention includes a plurality of gate lines Gn, Gn-1, . . ., that transfer scan signals, and a plurality of data lines Data thatintersect the gate lines Gn, Gn-1, . . . and transfer image data.

Further, a plurality of signal lines 10 are insulated from andjuxtaposed with the data lines Data.

First and second switching elements TFT1 and TFT2 are formed in each ofa plurality of pixel regions in the form of a matrix, which aresurrounded by the gate lines Gn, Gn-1, . . . and the data lines Data. Atthis time, it is preferred that each of the two switching elements be athin film transistor.

Here, a gate electrode of the first switching element TFT1 is connectedto the gate line Gn, a source electrode thereof is connected to the dataline Data, and a drain electrode thereof is connected to a pixelelectrode P formed on a lower substrate of a liquid crystal panel.Further, a common electrode Com is formed on an upper substrate oppositeto the lower substrate.

A liquid crystal material is filled between the pixel electrode P andthe common electrode Com and it is equivalently represented as liquidcrystal capacitance Clc. Storage capacitance Cst for maintaining avoltage applied to the liquid crystal capacitance Clc is also formed.The liquid crystal capacitance Clc and the storage capacitance (Cst)serve as driving loads of the LCD device.

In such a case, the liquid crystal capacitance Clc is changed due tovariation in a liquid crystal cell gap. The second switching elementsTFT2 for reading the variation in the liquid crystal capacitance Clc isconfigured in such a manner that its source electrode is connected tothe pixel electrode P, its drain electrode is connected to a signal line10, and its gate electrode is connected to a previous gate line Gn-1.

The signal lines 10 are connected to signal amplifiers 20, respectively.Each of the signal amplifiers 20 compares a signal applied to eachsignal line 10 and a reference voltage REF and then amplifies theresultant signal in response to the ON operation of the second switchingelement TFT2, so that it can be determined whether there is a change inthe cell gap at the desired location of the liquid crystal panel.

Now, the operation of the LCD device according to the second embodimentof the present invention will be described.

As a gate-on signal is first applied to the previous gate line Gn-1, thesecond switching element TFT2 is turned on and thus a pixel voltagecharged during a previous frame time is applied to the signal line 10and then input to the signal amplifier 20.

At this time, the quantity of electric charge Q charged into the pixelcan be expressed as the above equation 2.

That is, since the quantity of electric charge is constant, the applieddata voltage Vdata varies according to variation in the capacitance of aliquid crystal cell (more specifically, the liquid crystal capacitance).

At this time, the signal amplifier 20 compares the signal applied to thesignal line 10 with the reference voltage REF and then amplifies theresultant signal. Thus, the signal amplifier can recognize variation inthe charged voltage and accordingly determine whether there is variationin the cell gap at the relevant location of the liquid crystal panel.

Thereafter, as a gate-on signal is applied to a relevant gate line Gn,the first switching element TFT1 is turned on and thus the relevant datavoltage Vdata is charged with a pixel voltage.

Therefore, the second embodiment of the present invention has the sameeffects as the first embodiment of the present invention.

Next, the configuration of a thin film transistor substrate of the LCDdevice according to the first embodiment of the present invention willbe described in detail with reference to FIGS. 5 and 6.

FIG. 5 is a view showing the arrangement of the thin film transistorsubstrate for the LCD device according to the first embodiment of thepresent invention, and FIG. 6 is a sectional view of the thin filmtransistor substrate taken along line VI-VI′ of FIG. 5.

As shown in FIGS. 5 and 6, on an insulating substrate 10 is formed gatewiring 20, 21, 22 and 23 with a thickness of 1000 to 3500 Å which ismade of a conductive material such as aluminum or aluminum alloy, chromeor chrome alloy, molybdenum or molybdenum alloy, chrome nitride ormolybdenum nitride, etc.

The gate wiring 20, 21, 22 and 23 includes a gate line 20 extending in ahorizontal direction and first to third gate electrodes 21, 22 and 23each of which protrudes from the gate line 20.

For convenience of explanation, the gate line 20 is herein illustratedsuch that it can be differentiated from a previous gate line 20′ and asecond previous gate line 20″.

The first, second and third gate electrodes 21, 22 and 23 for formingthree thin film transistors operating in a single pixel region protrudefrom the gate line 20, the previous gate line 20′ and the secondprevious gate line 20″, respectively.

Meanwhile, the gate wiring 20, 21, 22 and 23 may be configured to have atwo or more layer structure. In such a case, it is preferred that atleast one layer be formed of a metal material with low resistance.

On the insulating substrate 10, the gate wiring 20, 21, 22 and 23 iscovered with a gate insulating film 30 with a thickness of 3500 to 4500Å which is made of an insulating material such as silicon nitride orsilicon oxide.

On the gate insulating film 30 are formed first to third semiconductorpatterns 41, 42 and 43 with a thickness of 800 to 1500 Å which overlapthe first to third gate electrodes 21, 22 and 23, respectively, and aremade of amorphous silicon etc. Ohmic contact layers 51, 52, 53, 54, 55and 56 with a thickness of 500 to 800 Å which are made of amorphoussilicon doped with conductive impurities.

On the ohmic contact layers 51, 52, 53, 54, 55 and 56 and the gateinsulating film 30 is formed data wiring 60, 61, 62, 63, 64, 65, 66 and67 with a thickness of 1500 to 3500 Å, which are made of a conductivematerial such as aluminum or its alloy, chrome or its alloy, molybdenumor its alloy, chrome nitride or molybdenum nitride, etc.

The data wiring 60 to 67 includes a data line 60 that extends in avertical direction and intersects the gate line 20 to define a specificpixel region, a signal line 65 that is formed in parallel with the dataline 60, a first source electrode 61 that protrudes from the data line60, a first drain electrode 62 that is formed to face the first sourceelectrode 61, a second source electrode 66 that protrudes from thesignal line 65, a second drain electrode 67 that is formed to face thesecond source electrode 66, a third source electrode 63 that is locatedabove the third gate electrode 23 formed in the second previous gatelines 20″ and protrudes from the data line 60, and a third drainelectrode 64 that is formed to face the third source electrode 63 andextends from a previous pixel region to a relevant pixel region.

The first source electrode 61 extends up to the top of the ohmic contactlayer 51 located on the first semiconductor pattern 41, and the firstdrain electrode 62 extends from the top of the other ohmic contact layer52 to the top of the gate insulating film 30 within the pixel region.Further, the second source electrode 66 extends up to the top of theohmic contact layer 53 located on the second semiconductor pattern 42,and the second drain electrode 67 extends from the top of the otherohmic contact layer 54 to the top of the gate insulating film 30 withinthe pixel region. Furthermore, the third source electrode 63 extends upto the top of the ohmic contact layer 55 located on the thirdsemiconductor pattern 43, and the third drain electrode 64 extends fromthe top of the other ohmic contact layer 56 to the top of the gateinsulating film 30 within the previous and relevant pixel regions.

At this time, the data wiring 60 to 67 may be formed to have a two ormore layer structure. In such a case, at least one layer is preferablyformed of a metal material with low resistance.

The data wiring 60 to 67 and the semiconductor patterns 41, 42 and 43are covered with a protection film 70 made of an insulating materialsuch as silicon nitride or silicon oxide.

First to third contact holes 71, 72 and 73 for allowing the first,second and third drain electrodes 62, 64 and 67 to be exposed in arelevant pixel region are formed in the protection film 70. Further, apixel electrode 80, which is connected to the first, second and thirddrain electrodes 62, 64, and 67 through the first to third contact holes71, 72 and 73, is formed on the protection film 70. Here, the pixelelectrode 80 is made of a transparent conductive material such as ITO(indium tin oxide) or IZO (indium zinc oxide).

Now, a method of fabricating a thin film transistor substrate accordingto the first embodiment of the present invention will be described withreference to FIGS. 7A to 10B together with FIGS. 5 and 6.

As shown in FIGS. 7A and 7B, a metal layer for gate wiring is depositedon the insulating substrate 10 and then patterned by a photolithographicetching process, in order to form the gate wiring 20, 21, 22 and 23 onthe insulating substrate 10. At this time, the gate wiring 20, 21, 22and 23 includes the gate line 20 and the first to third gate electrodes21, 22 and 23.

As shown in FIGS. 8A and 8B, the gate insulating film 30 made of aninsulating material such as silicon nitride is deposited on theinsulating substrate 10 to cover the gate wiring 20, 21, 22 and 23.

Thereafter, an amorphous silicon layer and another amorphous siliconlayer doped with conductive impurities are sequentially formed on thegate insulating film 30 and then patterned by a photolithographicetching process to form the first to third semiconductor patterns 41, 42and 43 and the ohmic contact layer pattern 50.

As shown in FIGS. 9A and 9B, a metal layer for data wiring is depositedover the entire exposed surface of the substrate and then pattered by aphotolithographic etching process to form the data wiring 60 to 67. Thedata wiring 60 to 67 includes the data line 60, the signal line 65, thefirst to third source electrodes 61, 63 and 66, and the first to thirddrain electrodes 62, 64 and 67.

Thereafter, the ohmic contact layer pattern 50 is etched by using thefirst to third source electrodes 61, 63 and 66 and the first to thirddrain electrodes 62, 64 and 67 as a mask. At this time, the ohmiccontact layer pattern 50 is divided into the ohmic contact layer 51 incontact with the first source electrode 61 and an ohmic contact layer 52in contact with the first drain electrode 62. Similarly, the ohmiccontact layer pattern 50 is also divided into the ohmic contact layer 53in contact with the second source electrode 66 and the ohmic contactlayer 54 in contact with the second drain electrode 67. Furthermore, theohmic contact layer pattern 50 is divided into the ohmic contact layer55 in contact with the third source electrode 63 and the ohmic contactlayer 56 in contact with the third drain electrode 64.

Referring to FIGS. 10A and 10B, the protection film 70 is subsequentlyformed over the entire substrate including the data wiring 60 to 67 andthe semiconductor patterns 41, 42 and 43 with the silicon nitride,silicon oxide or the like.

The first to third contact holes 71, 72 and 73 through which the firstto third drain electrodes 62, 64 and 67 are exposed in the relevantpixel region are then formed by patterning the protection film 70through a photolithographic etching process.

As illustrated in FIGS. 5 and 6, a transparent conductive layer made ofITO or IZO is deposited over the entire exposed surface of the substrateand then patterned by a photolithographic etching process so that thepixel electrode 80 connected to the first to third drain electrodes 62,64 and 67 through the first to third contact holes 71, 72 and 73 can beformed on each pixel region.

Now, the configuration of a thin film transistor substrate of the LCDdevice according to the second embodiment of the present invention willbe described in detail with reference to FIGS. 11 and 12.

FIG. 11 is a view showing the arrangement of the thin film transistorsubstrate for the LCD device according to the second embodiment of thepresent invention, and FIG. 12 is a sectional view of the thin filmtransistor substrate taken along line XII-XII′ of FIG. 11.

Referring to these figures, on the insulating substrate 10 is formedgate wiring 20, 21 and 22 with a thickness of 1000 to 3500 Å which ismade of a conductive material such as aluminum or its alloy, chrome orits alloy, molybdenum or its alloy, chrome nitride or molybdenumnitride, etc.

The gate wiring 20, 21 and 22 includes a gate line 20 extending in ahorizontal direction and first and second gate electrodes 21 and 22 eachof which protrudes from the gate line 20.

At this time, the opposite first and second gate electrodes 21 and 22for forming two thin film transistors operating in a single pixel regionprotrude from the gate line and the previous gate line, respectively.

The gate wiring 20, 21 and 22 may be configured to have a two or morelayer structure. In such a case, it is preferred that at least one layerbe formed of a metal material with low resistance.

On the insulating substrate 10, the gate wiring 20, 21 and 22 is coveredwith a gate insulating film 30 with a thickness of 3500 to 4500 Å whichis made of an insulating material such as silicon nitride or siliconoxide.

On the gate insulating film 30 are formed first and second semiconductorpatterns 41 and 42 with a thickness of 800 to 1500 Å which overlap thefirst and second gate electrodes 21 and 22, respectively, and are madeof amorphous silicon, etc. Ohmic contact layers 51, 52, 53 and 54 with athickness of 500 to 800 Å which are made of amorphous silicon doped withconductive impurities.

On the ohmic contact layers 51, 52, 53 and 54 and the gate insulatingfilm 30 is formed data wiring 60, 61, 62, 65, 66 and 67 with a thicknessof 1500 to 3500 Å, which are made of a conductive material such asaluminum or its alloy, chrome or its alloy, molybdenum or its alloy,chrome nitride or molybdenum nitride, etc.

The data wiring 60, 61, 62, 65, 66 and 67 includes a data line 60 thatextends in a vertical direction and intersects the gate line 20 todefine a specific pixel region, a signal line 65 that is formed inparallel with the data line 60, a first source electrode 61 thatprotrudes from the data line 60, a first drain electrode 62 that isformed to face the first source electrode 61, a second source electrode66 that protrudes from the signal line 65, and a second drain electrode67 that is formed to face the second source electrode 66.

The first source electrode 61 extends up to above the ohmic contactlayer 51 located on the first semiconductor pattern 41, and the firstdrain electrode 62 extends from above the other ohmic contact layer 52to above the gate insulating film 30 within the pixel region. Further,the second source electrode 66 extends up to above the ohmic contactlayer 53 located on the second semiconductor pattern 42, and the seconddrain electrode 67 extends from above the other ohmic contact layer 54to above the gate insulating film 30 within the pixel region.

At this time, the data wiring 60, 61, 62, 65, 66 and 67 may be formed tohave a two or more layer structure. In such a case, at least one layeris preferably formed of a metal material with low resistance.

The data wiring 60, 61, 62, 65, 66 and 67 and the semiconductor patterns41 and 42 are covered with a protection film 70 made of an insulatingmaterial such as silicon nitride or silicon oxide.

First and second contact holes 71 and 72 through which the first andsecond drain electrodes 62 and 67 are exposed in a relevant pixel regionare formed in the protection film 70. Further, a pixel electrode 80,which is connected to the first and second drain electrodes 62 and 67through the first and second contact holes 71 and 72, is formed on theprotection film 70. Here, the pixel electrode 80 is made of atransparent conductive material such as ITO or IZO.

Further, a method of fabricating a thin film transistor substrateaccording to the second embodiment of the present invention will bedescribed with reference to FIGS. 13A to 16B together with FIGS. 11 and12.

As shown in FIGS. 13A and 13B, a metal layer for gate wiring isdeposited on the insulating substrate 10 and then patterned by aphotolithographic etching process, in order to form the gate wiring 20,21 and 22 on the insulating substrate 10. At this time, the gate wiring20, 21 and 22 includes the gate line 20 and the first and second gateelectrodes 21 and 22.

As shown in FIGS. 14A and 14B, the gate insulating film 30 made of aninsulating material such as silicon nitride is deposited on theinsulating substrate 10 to cover the gate wiring 20, 21 and 22.

Thereafter, an amorphous silicon layer and another amorphous siliconlayer doped with conductive impurities are sequentially formed on thegate insulating film 30 and then patterned by a photolithographicetching process to form the first and second semiconductor patterns 41and 42 and the ohmic contact layer pattern 50.

As shown in FIGS. 15A and 15B, a metal layer for data wiring isdeposited over the entire exposed surface of the substrate and thenpattered by a photolithographic etching process to form the data wiring60, 61, 62, 65, 66 and 67. The data wiring 60, 61, 62, 65, 66 and 67includes the data line 60, the signal line 65, the first and secondsource electrodes 61 and 66, and the first and second drain electrodes62 and 67.

Thereafter, the ohmic contact layer pattern 50 is etched by using thefirst and second source electrodes 61 and 66 and the first and seconddrain electrodes 62 and 67 as a mask. At this time, the ohmic contactlayer pattern 50 is divided into the ohmic contact layer 51 in contactwith the first source electrode 61 and an ohmic contact layer 52 incontact with the first drain electrode 62. Similarly, the ohmic contactlayer pattern 50 is also divided into the ohmic contact layer 53 incontact with the second source electrode 66 and the ohmic contact layer54 in contact with the second drain electrode 67.

Referring to FIGS. 16A and 16B, the protection film 70 is subsequentlyformed over the entire substrate including the data wiring 60, 61, 62,65, 66 and 67 and the semiconductor patterns 41 and 42 with the siliconnitride, silicon oxide or the like.

The first and second contact holes 71 and 72 through which the first andsecond drain electrodes 62 and 67 are exposed in the relevant pixelregion are then formed by patterning the protection film 70 through aphotolithographic etching process.

As illustrated in FIGS. 11 and 12, a transparent conductive layer madeof ITO or IZO is deposited over the entire exposed surface of thesubstrate and then patterned by a photolithographic etching process sothat the pixel electrode 80 connected to the first and second drainelectrodes 62 and 67 through the first and second contact holes 71 and72 can be formed on each pixel region.

According to the present invention, two or more switching means areprovided every pixel region to read variation in a liquid crystal cellgap. Therefore, the present invention has an advantage in that a touchscreen function can be implemented even without attaching an additionaltouch panel to the LCD device.

Although the present invention has been described in connection with thepreferred embodiment thereof, it is not limited thereto. Accordingly, itwill be apparent to those skilled in the art that various changes andmodifications can be made thereto without departing from the scope andspirit of the present invention defined by the appended claims.

1. A liquid crystal display (LCD) device having a touch screen function,comprising: a plurality of gate lines that transfer scan signals; aplurality of data lines that intersect the gate lines; a plurality ofsignal lines that are formed substantially in parallel with the datalines; two or more switching elements that are formed in each of aplurality of pixel regions in the form of a matrix, which are surroundedby the gate lines and the data lines; and signal amplifiers that receivesignals applied to the signal lines in response to the operation of thetwo or more switching elements.
 2. The LCD device as claimed in claim 1,wherein three switching elements are formed in each pixel region, andwherein the first switching element among them is turned on to charge arelevant data voltage when a gate-on signal is applied to a relevantgate line, the second switching element is turned on to charge aprevious data voltage when the gate-on signal is applied to a previousgate line, and the third switching element is turned on to apply theprevious data voltage to the signal line when the gate-on signal isapplied to a second previous gate line.
 3. The LCD device as claimed inclaim 1, wherein two switching elements are formed in each pixel region,and wherein the first switching element is turned on to charge arelevant data voltage when a gate-on signal is applied to a relevantgate line, and the second switching element is turned on to apply thedata voltage charged during a previous frame time to the signal linewhen the gate-on signal is applied to a previous gate line.
 4. An LCDdevice having a touch screen function, comprising: an insulatingsubstrate; a gate line formed on the insulating substrate; a gateinsulating film covered on the gate line; a data line that intersectsthe gate line and defines a pixel region on the gate insulating film; asignal line formed substantially in parallel with the data line; a firstthin film transistor electrically connected to both the gate line andthe data line; a second thin film transistor electrically connected toboth a previous gate line and the signal line; a third thin filmtransistor electrically connected to a second previous gate line and thedata line; a protection film that covers the first to third thin filmtransistors, the data line and the signal line, and includes first tothird contact holes through which each of drain electrodes of the firstto third thin film transistors is exposed; and a pixel electrode that isconnected to the first to third drain electrodes through the first tothird contact holes.
 5. The LCD device as claimed in claim 4, whereinthe third thin film transistor is formed in a previous pixel region, andthe third drain electrode extends up to the relevant pixel region and isconnected to the relevant pixel electrode through the third contacthole.
 6. A method of fabricating an LCD device having a touch screenfunction, comprising the steps of: forming gate wiring including a gateline and first to third gate electrodes on an insulating substrate;forming a gate insulating film for covering the gate wiring; formingfirst to third semiconductor patterns on the gate insulating film;forming, on the gate insulating film, data wiring including a data linethat intersects the gate line, first to third source electrodes andfirst to third drain electrodes that are electrically connected to thefirst to third semiconductor patterns, and a signal line that isconnected to the second source electrode; forming a protection film thatcovers the semiconductor patterns and the data wiring; forming first tothird contact holes, through which the first to third drain electrodesare exposed, in the protection film; and forming a pixel electrode thatis connected to the first to third drain electrodes through the first tothird contact holes.
 7. The method as claimed in claim 6, wherein thethird drain electrode extends from a previous pixel region up to arelevant pixel region and is connected to a relevant pixel electrodethough the third contact hole.
 8. An LCD device having a touch screenfunction, comprising: an insulating substrate; a gate line formed on theinsulating substrate; a gate insulating film covered on the gate line; adata line that intersects the gate line and defines a pixel region onthe gate insulating film; a signal line formed substantially in parallelwith the data line; a first thin film transistor electrically connectedto both the gate line and the data line; a second thin film transistorelectrically connected to both a previous gate line and the signal line;a protection film that covers the first and second thin filmtransistors, the data line and the signal line, and includes first andsecond contact holes through which each of drain electrodes of the firstand second thin film transistors is exposed; and a pixel electrode thatis connected to the first and second drain electrodes through the firstand second contact holes.
 9. A method of fabricating an LCD devicehaving a touch screen function, comprising the steps of: forming gatewiring including a gate line and first and second gate electrodes on aninsulating substrate; forming a gate insulating film for covering thegate wiring; forming first and second semiconductor patterns on the gateinsulating film; forming, on the gate insulating film, data wiringincluding a data line that intersects the gate line, first and secondsource electrodes and first and second drain electrodes that areelectrically connected to the first and second semiconductor patterns,and a signal line that is connected to the second source electrode;forming a protection film that covers the semiconductor patterns and thedata wiring; forming first and second contact holes, through which thefirst and second drain electrodes are exposed, in the protection film;and forming a pixel electrode that is connected to the first and seconddrain electrodes through the first and second contact holes.